BAV99 — Small Signal Diode
? 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BAV99 Rev. C1 1
August 2011
BAV99
Small Signal Diode
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol Parameter
Value Units
VRRM
Maximum Repetitive Reverse Voltage 70 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 300 microseconds
1.0
8.0
A
A
Tstg
Storage Temperature Range -55 to +150
°C
Tj
Operating Junction Temperature -55 to +150
°C
Symbol Parameter Value Units
PD
Power Dissipation 350 mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
Symbol Parameter Test Condition Min. Max. Units
VR
Breakdown Voltage IR
= 100
μA70 V
VF
Forward Voltage IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
715
855
1.0
1.25
mV
mV
V
V
IR
Reverse Leakage VR
= 70V
VR
= 25V, T
A
= 150
°C
VR
= 70V, T
A
= 150
°C
2.5
30
50
μA
μA
μA
CT
Total Capacitance VR
= 0V, f = 1.0MHz 1.5 pF
trr
Reverse Recovery Time IF
= I
R
= 10mA, I
RR
= 1.0mA,
RL
= 100
Ω
6.0 ns
SOT-23
3
1
2
Connection Diagram
3
1
12
3
A7
2
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